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| MJH6284 (NPN), MJH6284 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These devices are designed for general-purpose amplifier and low-speed switching motor control applications. Features http://onsemi.com * * * * Similar to the Popular NPN 2N6284 and the PNP 2N6287 Rugged RBSOA Characteristics Monolithic Construction with Built-in Collector-Emitter Diode Pb-Free Packages are Available* DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS MARKING DIAGRAM PD , POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIII III II I I II I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII III III II I I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I I III I I IIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I III III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB Max 100 100 5.0 20 40 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current - Continuous - Peak 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 160 1.28 W W/_C _C TJ, Tstg -65 to +150 MAXIMUM RATINGS SOT-93 (TO-218) CASE 340D AYWWG MJH628x THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit Thermal Resistance, Junction-to-Case 0.78 _C/W A = Y = WW = G = MJH628x = Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Assembly Location Year Work Week Pb-Free Package Device Code x = 4 or 7 ORDERING INFORMATION Device MJH6284 MJH6284G MJH6287 MJH6287G Package SOT-93 SOT-93 (Pb-Free) SOT-93 SOT-93 (Pb-Free) Shipping 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail Preferred devices are recommended choices for future use and best overall value. Figure 1. Power Derating *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 1 July, 2006 - Rev. 5 Publication Order Number: MJH6284/D MJH6284 (NPN), MJH6284 (PNP) I IIIIIIIIIII I II I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I I I IIIIIIIIIII I II IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII II I IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I III I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) VCEO(sus) ICEO ICEX 100 - - - - - Vdc 1.0 0.5 5.0 2.0 mAdc mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) hFE - 750 100 - - - - 18,000 - 2.0 3.0 2.8 4.0 Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) Vdc Vdc Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT 4.0 - - - MHz pF Cob MJH6284 MJH6287 400 600 - Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 - SWITCHING CHARACTERISTICS Typical Resistive Load Symbol td tr NPN 0.1 0.3 1.0 3.5 PNP 0.1 0.3 1.0 2.0 Unit ms Delay Time Rise Time Storage Time Fall Time VCC = 30 Vdc, IC = 10 Adc IB1 = IB2 = 100 mA Duty Cycle = 1.0% ts tf 1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +12 V 0 V1 APPROX -8.0 V tr, tf, 10 ns DUTY CYCLE = 1.0% 51 RB VCC -30 V RC SCOPE NPN MJH6284 COLLECTOR PNP MJH6287 COLLECTOR BASE D1 +4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0 8.0 k 50 BASE EMITTER EMITTER For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic http://onsemi.com 2 MJH6284 (NPN), MJH6284 (PNP) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 0.78C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 Figure 4. Thermal Response FBSOA, FORWARD BIAS SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5 SECOND BREAKDOWN LIMITED 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc TJ = 150C 0.2 0.1 0.05 2.0 BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25C (SINGLE PULSE) 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. MJH6284, MJH6287 50 IC, COLLECTOR CURRENT (AMPS) FORWARD BIAS 40 30 DUTY CYCLE = 10% 20 L = 200 mH IC/IB 100 TC = 25C VBE(off) = 0-5.0 V RBE = 47 W 0 10 20 30 40 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 110 10 0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area http://onsemi.com 3 MJH6284 (NPN), MJH6284 (PNP) NPN 3000 2000 hFE , DC CURRENT GAIN TJ = 150C 1000 25C 500 300 200 150 0.2 0.3 0.5 -55 C 1.0 2.0 3.0 5.0 7.0 10 20 VCE = 3.0 V 3000 hFE , DC CURRENT GAIN 2000 5000 VCE = 3.0 V TJ = 150C 25C PNP 1000 700 500 300 0.2 -55 C 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 IC = 5.0 A 20 30 50 10 100 200 300 500 IB, BASE CURRENT (mA) 1000 IC = 10 A IC = 15 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 IC = 5.0 A 100 200 300 500 1000 IC = 10 A IC = 15 A IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 3.0 TJ = 25C V, VOLTAGE (VOLTS) 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) 2.5 2.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE(on) @ VCE = 3.0 V 1.5 1.0 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. "On" Voltages http://onsemi.com 4 MJH6284 (NPN), MJH6284 (PNP) PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE E C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. 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